杨洪新研究员,博士生导师
杨洪新,研究员,量子功能材料团队负责人。获国家海外高层次引进人才计划支持,于17年加入宁波材料所。
杨洪新研究员一直致力于自旋电子学理论计算研究,主要研究磁随机存储器以及磁斯格明子应用中涉及到的基本物理学现象。在自旋电子学领域主要贡献有:(1)发展了基于第一原理的投影轨道特征谱分析垂直磁各向异性,原子层分辨和轨道杂化分辨计算分析垂直磁各向异性的方法,阐明了铁磁材料/金属氧化物界面的巨大垂直磁各向异性的物理机制,预言了在MgO基磁隧道结可以同时实现巨大TMR和PMA,并获实验验证,解决了STT-MRAM的一个关键问题。(2)发展了基于DFT计算界面Dzyaloshinskii-Moriya interaction (IDMI)的方法,从而在第一性原理层面阐明了铁磁金属/重金属界面DMI的物理机制;预言多种界面DMI材料并提出多种调控方法,被大量实验所验证,获得同行的认可,为基于手性磁畴及Skyrmion的磁存储应用提供重要理论指导。已发表论文70余篇。Nature等杂志审稿人。在APS March Meeting等学术会议作邀请报告30余次。主持多项国家及省部级项目。
Selected Publications:
13. Significant Dzyaloshinskii-Moriya Interaction at Graphene-Ferromagnet Interfaces
Hongxin Yang, Gong Chen, Alexandre A.C. Cotta, Alpha T. N'Diaye, Kai Liu, Andreas Schmid, Albert Fert, Mairbek Chshiev
Nature Materials 17, 605 (2018)
12. Room-temperature chiral magnetic skyrmions in ultrathin magnetic nanostructures
O. Boulle, J. Vogel, Hongxin Yang, S. Pizzini, D. de Souza Chaves, A. Locatelli, T. O. Mentes, A. Sala, L. D. Buda-Prejbeanu, O. Klein, M. Belmeguenai, Y. Roussigné, A. Stashkevich, S. M. Chérif, L. Aballe, M. Foerster, M. Chshiev, S. Auffret, I. M. Miron, G. Gaudin
Nature Nanotechnology 11, 449 (2016)
Weinan Lin, Baishun Yang, Andy Paul Chen, Xiaohan Wu, Rui Guo, Shaohai Chen, Liang Liu, Qidong Xie, Xinyu Shu, Yajuan Hui, Gan Moog Chow, Yuanping Feng, Giovanni Carlotti, Silvia Tacchi, Hongxin Yang, Jingsheng Chen
Phys. Rev. Lett. 124, 217202 (2020)
10. Anatomy of Dzyaloshinskii-Moriya Interaction at Co/Pt Interfaces
Hongxin Yang, A. Thiaville, S. Rohart, A. Fert, and M. Chshiev
Phys. Rev. Lett. 115, 267210 (2015)
B. S. Tao, Hongxin Yang, Y. L. Zuo, X. Devaux, G. Lengaigne, M. Hehn, D. Lacour, S. Andrieu, M. Chshiev, T. Hauet, S. Mangin, F. Montaigne, X. F. Han, Y. Lu
Phys. Rev. Lett. 115, 157204 (2015)
Hongxin Yang, A. Hallal, D. Terrade, X. Waintal, S. Roche and M. Chshiev
Phys. Rev. Lett. 110, 046603 (2013)
Y. Niimi, Y. Kawanishi, D. H. Wei, C. Derahlot, Hongxin Yang, M. Chshiev, T. Valet, A. Fert, and Y. Otani
Phys. Rev. Lett. 109, 156602 (2012)
6. Bond Counting Rule for Carbon and Its Application to the Roughness of Diamond (001)
Hongxin Yang, L. F. Xu, Z. Fang, C. Z. Gu, and S. B. Zhang
Phys. Rev. Lett. 100, 026101 (2008)
5. Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer
Qidong Xie, Weinan Lin, Baishun Yang, Xinyu Shu, Shaohai Chen, Liang Liu, Xiaojiang Yu, Mark BH Breese, Tiejun Zhou, Ming Yang, Zheng Zhang, Shijie Wang, Hongxin Yang, Jianwei Chai, Xiufeng Han, Jingsheng Chen
Advanced Materials 31 (21), 1900776 (2019)
4. Ferroelectric control of organic/ferromagnetic spinterface
S. H. Liang,Hongxin Yang, H. W. Yang, B. S. Tao, A. Djeffal, M. Chshiev, W. C. Huang, X. G. Li, A. Ferri, R. Desfeux, S. Mangin, D. Lacour, M. Hehn, O. Copie, K. Dumesnil, Y. Lu
Advanced Materials 28, 10204 (2016)
3. Coherent Resonant Tunneling through Double Metallic Quantum Well States
Bingshan Tao, Caihua Wan, Ping Tang, Jiafeng Feng, Hongxiang Wei, Xiao Wang, Stephane Andrieu, Hongxin Yang, Mairbek Chshiev, Xavier Devaux, Thomas Hauet, Francois Montaigne, Stephane Mangin, Michel Hehn, Daniel Lacour, Xiufeng Han, Yuan Lu
Nano Letters 19, 3019 (2019)
Hongxin Yang, D. Vu Anh, A. Hallal, N. Rougemaille, J. Coraux, G. Chen, A. K. Schmid, and M. Chshiev
Nano Letters 16, 145 (2016)
Jinghua Liang, Weiwei Wang, Haifeng Du, Ali Hallal, Karin Garcia, Mairbek Chshiev, Albert Fert, Hongxin Yang
Phys. Rev. B 101, 184401 (2020) (Editors' Suggestion)